Plasma Enhanced Chemical Vapor Deposition (PECVD)

Model ID: 12393

This model simulates deposition of silicon onto a wafer using a 95/5 mixture of argon and silane. The plasma chemistry consists of 19 volumetric reactions, 8 surface reactions, 11 volumetric species and 3 surface species. The plasma is highly electronegative due to the presence of SiH4- ions.

This model was built using the following:

Plasma Module

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